LGM25PJ120E2T1S
Vcesat with positive temperature coefficient
Low vcesat
Low switching loss
Low inductance enclosure
10μS short circuit capacity
Isolation copper substrate using DBC Technology
Copyright ? 上海道徑電子科技有限公司 All Rights Reserved 滬ICP備05064014號-1 網(wǎng)站設(shè)計(jì):JCE
